Effect of niobium doping on the microstructure and electrical properties of strontium titanate thin films for semiconductor memory application

被引：20

作者：

Gopalan, S ^{[1
]}

Wong, CH ^{[1
]}

Balu, V ^{[1
]}

Lee, JH ^{[1
]}

Han, JH ^{[1
]}

Mohammedali, R ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 14期

关键词：

D O I：

10.1063/1.124937

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Niobium doped strontium titanate [Sr(Ti1-xNbx)O-3] thin films (congruent to 40 nm) were deposited on Ir substrates using rf magnetron sputtering. The effect of Nb content (x=0, 0.001, 0.01, and 0.05) on the microstructure, dielectric constant, dielectric dispersion, and leakage current was studied. It was found that with increasing Nb content the dielectric constant decreased, probably owing to an observed decrease in grain size. The dielectric dispersion of all the Nb-doped ST films was lower than that of undoped ST film deposited at the same temperature and pressure. For the case of x=0.01, dispersion as low as 0.425% per decade was observed. The leakage current was found to increase slightly for x=0.001 and x=0.01, and drastically for the x=0.05 case. (C) 1999 American Institute of Physics. [S0003-6951(99)00240-5].

引用

页码：2123 / 2125

页数：3

共 17 条

[1] DC ELECTRICAL DEGRADATION OF PEROVSKITE-TYPE TITANATES .3. A MODEL OF THE MECHANISM [J].