Processing and properties of strontium bismuth vanadate niobate ferroelectric ceramics

被引:53
作者
Wu, Y [1 ]
Nguyen, C [1 ]
Seraji, S [1 ]
Forbess, MJ [1 ]
Limmer, SJ [1 ]
Chou, T [1 ]
Cao, GZ [1 ]
机构
[1] Univ Washington, Seattle, WA 98195 USA
关键词
D O I
10.1111/j.1151-2916.2001.tb01109.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The processing conditions, microstructure, and dielectric properties of strontium bismuth niobate vanadate ceramics, SrBi2(VxNb1-x)(2)O-9 (SBVN, with 0 less than or equal to x less than or equal to 0.3), were systematically studied. A relative density of > 90% was obtained for all the samples using a two-step sintering process. XRD showed that a single phase with the layered perovskite structure of SrBi2Nb2O9 (SBN) was formed with a vanadium content of up to 30 at.%. SEM revealed that the average grain size decreased gradually with an increase in vanadium content. The Curie point was found to gradually increase from similar to 418 degreesC for SBN to similar to 459 degreesC for SBVN with 30 at.% vanadium. Dielectric constants at room temperature and their respective Curie points were found to peak at a composition with 10-15 at.% vanadium. Moreover, a high concentration of vanadium (>5 at.%) resulted in a significant increase in tangent loss at low frequencies (< 1000 Hz). The relationships between chemical composition, processing condition, microstructure, and dielectric properties of SBVN ferroelectric ceramics are discussed.
引用
收藏
页码:2882 / 2888
页数:7
相关论文
共 25 条
[1]   PREPARATION OF BI-BASED FERROELECTRIC THIN-FILMS BY SOL-GEL METHOD [J].
ATSUKI, T ;
SOYAMA, N ;
YONEZAWA, T ;
OGI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9B) :5096-5099
[2]  
Cao G.Z., 2001, ADV MAT SCI APPL, P86
[3]   FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES [J].
DEARAUJO, CAP ;
CUCHIARO, JD ;
MCMILLAN, LD ;
SCOTT, MC ;
SCOTT, JF .
NATURE, 1995, 374 (6523) :627-629
[4]   Oriented growth of SrBi2Ta2O9 ferroelectric thin films [J].
Desu, SB ;
Vijay, DP ;
Zhang, X ;
He, BP .
APPLIED PHYSICS LETTERS, 1996, 69 (12) :1719-1721
[5]   FATIGUE-FREE SRBI2(TAXNB1-X)(2)O-9 FERROELECTRIC THIN-FILMS [J].
DESU, SB ;
LI, TK .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 34 (01) :L4-L8
[6]   C-AXIS ORIENTED FERROELECTRIC SRBI2(TAXNB2-X)O-9 THIN-FILMS [J].
DESU, SB ;
VIJAY, DP .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 32 (1-2) :83-88
[7]   Influence of Bi-site substitution on the ferroelectricity of the Aurivillius compound Bi2SrNb2O9 [J].
Duran-Martin, P ;
Castro, A ;
Millan, P ;
Jimenez, B .
JOURNAL OF MATERIALS RESEARCH, 1998, 13 (09) :2565-2571
[8]   Dielectric properties of layered perovskite Sr1-xAxBi2Nb2O9 ferroelectrics (A=La, Ca and x=0,0.1) [J].
Forbess, MJ ;
Seraji, S ;
Wu, Y ;
Nguyen, CP ;
Cao, GZ .
APPLIED PHYSICS LETTERS, 2000, 76 (20) :2934-2936
[9]  
Kato K, 1998, J AM CERAM SOC, V81, P1869, DOI 10.1111/j.1151-2916.1998.tb02559.x
[10]  
KUMAR U, 1992, P 1992 IEEE INT S AP, P55