Flux growth of gallium orthophosphate crystals

被引：6

作者：

Shvanskii, E ^{[1
]}

Armand, P ^{[1
]}

Balitsky, D ^{[1
]}

Philippot, E ^{[1
]}

Papet, P ^{[1
]}

机构：

[1] UMII CC003, UMR 5617, CNRS, LPMC, F-34095 Montpellier 5, France

来源：

ANNALES DE CHIMIE-SCIENCE DES MATERIAUX | 2006年 / 31卷 / 01期

关键词：

D O I：

10.3166/acsm.31.97-102

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Single crystals of the piezoelectric material alpha-GaPO4 were grown by the slow cooling method with spontaneous nucleation using K2Mo3O10 as a flux. Colorless and transparent crystals up to 5x2x2 mm(3) were obtained by slow cooling at a rate of 5 degrees C/h. Infrared absorption measurements revealed samples without significant OH groups.

引用

页码：97 / 102

页数：6

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