MgB2 tunnel junctions and 19 K low-noise dc superconducting quantum interference devices

被引：53

作者：

Zhang, Y ^{[1
]}

Kinion, D

Chen, J

Clarke, J

Hinks, DG

Crabtree, GW

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 24期

关键词：

D O I：

10.1063/1.1424465

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Point contact junctions made from two pieces of MgB2 can be adjusted to exhibit either superconductor-insulator-superconductor (SIS) or superconductor-normal metal-superconductor (SNS) current-voltage characteristics. The SIS characteristics are in good agreement with the standard tunneling model for s-wave superconductors, and yield an energy gap of (2.02+/-0.08) meV. The SNS characteristics are in good agreement with the predictions of the resistively-shunted junction model. DC superconducting quantum interference devices made from two SNS junctions yield magnetic flux and field noise as low as 4 mu Phi (0) Hz(-1/2) and 35 fT Hz(-1/2) at 19 K; Phi (0) is the flux quantum. (C) 2001 American Institute of Physics.

引用

页码：3995 / 3997

页数：3

共 17 条

[1] VOLTAGE DUE TO THERMAL NOISE IN DC JOSEPHSON EFFECT [J].