Observation of a large third-order nonlinear response of exciton polaritons in GaAs thin film

被引：52

作者：

Akiyama, K ^{[1
]}

Tomita, N ^{[1
]}

Nomura, Y ^{[1
]}

Isu, T ^{[1
]}

机构：

[1] Mitsubishi Elect Corp, Amagasaki, Hyogo 6618661, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 04期

关键词：

D O I：

10.1063/1.124413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the third-order nonlinear response of excitons in GaAs thin films grown by molecular beam exitaxy. Degenerate four-wave mixing (DFWM) measurements were made using picosecond pulses of 3.2 ps auto correlation width at T = 5 K. The DFWM signal of a 110-nm-thick GaAs film at exciton resonance energy is 25 times larger than that of a 1-mu m-thick GaAs film. This enhancement is explained by the confinement effect of exciton polaritons, which is due to the nonlocal response of the center-of-mass quantized states of excitons in a radiation field. (C) 1999 American Institute of Physics. [S0003-6951(99)03530-5].

引用

页码：475 / 477

页数：3

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