High-efficiency power amplifier integrated with antenna

被引：48

作者：

Radisic, V

Chew, ST

Qian, YX

Itoh, T

机构：

[1] Department of Electrical Engineering, Univ. of California at Los Angeles, Los Angeles

[2] Defense Science Organizations, Ministry of Defense

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1997年 / 7卷 / 02期

关键词：

active antenna; class B; FET; power amplifier;

D O I：

10.1109/75.553052

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two class B GaAs field-effect transistor (FET) power amplifiers integrated with patch antennas have been designed and fabricated at 2.48 GHz. Both amplifiers are integrated with patch antennas, which serve as load and radiator, In one case, a standard patch design was used with random harmonic termination, In another case, a modified patch design was used, which allows the tuning of the second harmonic, In this case the antenna has an additional function of a filter, An increase of 7% in the power-added efficiency (PAE) and 0.5 dB in the output power was achieved through the second harmonic tuning.

引用

页码：39 / 41

页数：3

共 6 条

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[2]

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