Czochralski growth and characterization of piezoelectric single crystals with langasite structure:: La3Ga5SiO14 (LGS), La3Ga5.5Nb0.5O14 (LGN), and La3Ga5.5Ta0.5O14 (LGT) Part I

被引：186

作者：

Bohm, J ^{[1
]}

Heimann, RB ^{[1
]}

Hengst, M ^{[1
]}

Roewer, R ^{[1
]}

Schindler, J ^{[1
]}

机构：

[1] Freiberg Univ Min & Technol, Dept Mineral, D-09596 Freiberg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 204卷 / 1-2期

关键词：

langasite; Czochralski; piezoelectricity; conductivity; optical activity;

D O I：

10.1016/S0022-0248(99)00186-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Crystals of LGS, LGN, and LGT of the enantiomorphous crystal class 32 were grown by the Czochralski technique in Z-, X-, and Y-pulling directions. The as-grown crystals exhibit high structural perfection as confirmed by etching with orthophosphoric acid, revealing an etch Fit density and hence a dislocation density of about 10(3) cm(-2). The specific electric resistances and the optical activities of the crystals were measured. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：128 / 136

页数：9

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