Comparison of mobility and hole current activation energy in the space charge trap-limited regime in a starburst amine

被引:21
作者
Staudigel, J [1 ]
Stössel, M [1 ]
Steuber, F [1 ]
Simmerer, J [1 ]
机构
[1] Siemens AG, Corp Technol, D-91052 Erlangen, Germany
关键词
D O I
10.1063/1.124327
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using two complementary methods, we have investigated the individual contribution of the space charge-limited hole transport in vapor-deposited films of 4,4('),4(')-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (m-MTDATA) to the temperature behavior of organic light-emitting diodes. In single-layer indium tin oxide/m-MTDATA/Ag structures, we have measured the activation energies of the current density and of the hole mobility as a function of the applied electric field. Both activation energies obtained under steady-state and pulsed conditions are comparable, which confirms that the temperature behavior of the current density is predominantly governed by the hole mobility. (C) 1999 American Institute of Physics. [S0003-6951(99)00328-9].
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页码:217 / 219
页数:3
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