Mechanism of organization of three-dimensional islands in SiGe/Si multilayers

被引:135
作者
Mateeva, E [1 ]
Sutter, P [1 ]
Bean, JC [1 ]
Lagally, MG [1 ]
机构
[1] UNIV VIRGINIA,CHARLOTTESVILLE,VA 22903
关键词
D O I
10.1063/1.120300
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thp organization of coherent three-dimensional islands during the growth of SiGe/Si multilayers on Si(100) was investigated with cross-sectional transmission electron microscopy. Merging of islands of different initial size is found to be the dominant mechanism leading to a uniform size distribution. Upon overgrowth with Si, we observe a change of the shape of the islands from the {105}-faceted ''hut'' to a boxlike shape bounded on top by a (100) facet. (C) 1997 American Institute of Physics.
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收藏
页码:3233 / 3235
页数:3
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