Fracture toughness and crack growth phenomena of plasma-etched single crystal silicon

被引:65
作者
Fitzgerald, AM [1 ]
Dauskardt, RH
Kenny, TW
机构
[1] Stanford Univ, Dept Aeronaut & Astronaut, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[3] Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA
基金
美国国家科学基金会;
关键词
micro-machining; plasma etch; silicon; fracture toughness; Weibull;
D O I
10.1016/S0924-4247(99)00383-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have measured the fracture toughness, K-Ic, of the < 110 > crystal plane in micro-machined silicon structures fabricated using a common deep reactive ion plasma etch process. Crack initiation occurred at surface features left by the etch process. Wide scatter in the notch toughness (0.96-1.65 MPa m(1/2)), presumably due to a distribution of surface flaws, was measured in 11 samples. The data fit a Weibull distribution with m = 4.84. Crack propagation in the sample occurred as a series of discrete fracture events interspersed with periods of no growth. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
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页码:194 / 199
页数:6
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