Morphology Engineering: A Route to Highly Reproducible and High Efficiency Perovskite Solar Cells

被引:52
作者
Bi, Dongqin [1 ]
Luo, Jingshan [1 ]
Zhang, Fei [1 ,5 ]
Magrez, Arnaud [3 ]
Athanasopoulou, Evangelia Nefeli [4 ]
Hagfeldt, Anders [2 ]
Gratzel, Michael [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Lab Photon & Interfaces, Inst Chem Sci Engn, Stn 6, CH-1015 Lausanne, Switzerland
[2] Ecole Polytech Fed Lausanne, Lab Photomol Sci, Lausanne, Switzerland
[3] Ecole Polytech Fed Lausanne, Inst Condensed Matter Phys, Lausanne, Switzerland
[4] Ecole Polytech Fed Lausanne, Inst Mat, Lausanne, Switzerland
[5] Tianjin Univ, Sch Chem Engn & Technol, Tianjin 300072, Peoples R China
基金
瑞士国家科学基金会; 欧盟地平线“2020”;
关键词
lead iodide; morphology; perovskites; solar cells; stability; PERFORMANCE; PHOTOVOLTAICS; PASSIVATION; HYSTERESIS;
D O I
10.1002/cssc.201601387
中图分类号
O6 [化学];
学科分类号
070301 [无机化学];
摘要
Despite the rapid increase in the performance of perovskite solar cells (PSC), they still suffer from low lab-to-lab or people-to-people reproducibility. Aiming for a universal condition to high-performance devices, we investigated the morphology evolution of a composite perovskite by tuning annealing temperature and precursor concentration of the perovskite film. Here, we introduce thermal annealing as a powerful tool to generate a well-controlled excess of PbI2 in the perovskite formulation and show that this benefits the photovoltaic performance. We demonstrated the correlation between the film microstructure and electronic property and device performance. An optimized average grain size/thickness aspect ratio of the perovskite crystallite is identified, which brings about a highly reproducible power conversion efficiency (PCE) of 19.5%, with a certified value of 19.08%. Negligible hysteresis and outstanding morphology stability are observed with these devices. These findings lay the foundation for further boosting the PCE of PSC and can be very instructive for fabrication of high-quality perovskite films for a variety of applications, such as light-emitting diodes, field-effect transistors, and photodetectors.
引用
收藏
页码:1624 / 1630
页数:7
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