Internal stress of amorphous carbon nitride films

被引：14

作者：

Aono, M ^{[1
]}

Nitta, S ^{[1
]}

Katsuno, T ^{[1
]}

Iuchi, T ^{[1
]}

机构：

[1] Gifu Univ, Dept Elect Engn, Gifu 5011193, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.591470

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the characteristics of amorphous carbon nitride (a-CNx) films as low dielectric constant materials for ultralarge scale integration. In this article the initial internal stress of a-CNx films is studied and discussed. The stress in a single-layer film on a substrate is determined using the measured radius of curvature and Stoney's equation. a-CNx films are prepared by a reactive radio frequency magnetron sputtering on the ultrathin quartz glass substrates. It is observed that the internal stress in a-CNx depends mainly on the substrate temperature increasing from about 10 to 50 MPa of compressive nature. These values are about one tenth of that for hydrogenated amorphous silicon (a-Si:H) prepared by a plasma-enhanced chemical vapor deposition. (C) 2000 American Vacuum Society.

引用

页码：1773 / 1775

页数：3

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