Semiconductor physics - Transport news

被引：10

作者：

Boland, JJ ^{[1
]}

机构：

[1] Univ Dublin Trinity Coll, CRANN, Dublin 2, Ireland

[2] Univ Dublin Trinity Coll, Sch Chem, Dublin 2, Ireland

来源：

NATURE | 2006年 / 439卷 / 7077期

关键词：

D O I：

10.1038/439671a

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Conventionally, conduction in silicon is enhanced by doping — adding impurities that change the material's electronic structure. But exploiting surface effects in thin silicon films may offer yet other opportunities.

引用

页码：671 / +

页数：2

共 4 条

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NATURE, 2005, 437 (7062) :1128-1131

[4] Electronic transport in nanometre-scale silicon-on-insulator membranes [J].

Zhang, PP ;

Tevaarwerk, E ;

Park, BN ;

Savage, DE ;

Celler, GK ;

Knezevic, I ;

Evans, PG ;

Eriksson, MA ;

Lagally, MG .

NATURE, 2006, 439 (7077) :703-706

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