Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers

被引:175
作者
Chow, WW
Choquette, KD
Crawford, MH
Lear, KL
Hadley, GR
机构
[1] Sandia National Laboratories, Albuquerque
[2] Micro Optical Devices, Inc., Albuquerque
[3] Department of Physics and Astronomy, University of New Mexico, Albuquerque, NM
[4] Sandia National Laboratories, Albuquerque, NM
[5] University of Arizona, Tucson, AZ
[6] University of Colorado, Boulder, CO
[7] AT and T Bell Laboratories, Murray Hill, NJ
[8] Holy Cross College, Worcester, MA
[9] Brown University, Providence, RI
关键词
optoelectronic devices; semiconductor device fabrication; semiconductor lasers;
D O I
10.1109/3.631287
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper discusses the issues involving the design and fabrication of vertical-cavity surface-emitting lasers (VCSEL's). A review of the basic experimental structures is given, with emphasis on recent developments in distributed Bragg reflectors, gain media, as well as current and optical confinement techniques. The paper describes present VCSEL performance, in particular, those involving selective oxidation and visible wavelength operation.
引用
收藏
页码:1810 / 1824
页数:15
相关论文
共 102 条
[1]  
ADACHI S, 1992, PHYSICAL PROPERTIES
[2]   OPTICAL GAIN IN A STRAINED-LAYER QUANTUM-WELL LASER [J].
AHN, D ;
CHUANG, SL .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (12) :2400-2406
[3]   HIGH-POWER, DIFFRACTION-LIMITED-BEAM OPERATION FROM PHASE-LOCKED DIODE-LASER ARRAYS OF CLOSELY SPACED LEAKY WAVE-GUIDES (ANTIGUIDES) [J].
BOTEZ, D ;
MAWST, L ;
HAYASHIDA, P ;
PETERSON, G ;
ROTH, TJ .
APPLIED PHYSICS LETTERS, 1988, 53 (06) :464-466
[4]  
CARSON RF, 1996, P SOC PHOTO-OPT INS, V62, P35
[5]   LOW RESISTANCE WAVELENGTH-REPRODUCIBLE P-TYPE (AL,GA)AS DISTRIBUTED BRAGG REFLECTORS GROWN BY MOLECULAR-BEAM EPITAXY [J].
CHALMERS, SA ;
LEAR, KL ;
KILLEEN, KP .
APPLIED PHYSICS LETTERS, 1993, 62 (14) :1585-1587
[6]   LOW-THRESHOLD BURIED HETEROSTRUCTURE VERTICAL-CAVITY SURFACE-EMITTING LASER [J].
CHANGHASNAIN, CJ ;
WU, YA ;
LI, GS ;
HASNAIN, G ;
CHOQUETE, KD ;
CANEAU, C ;
FLOREZ, LT .
APPLIED PHYSICS LETTERS, 1993, 63 (10) :1307-1309
[7]   TRANSVERSE-MODE CHARACTERISTICS OF VERTICAL CAVITY SURFACE-EMITTING LASERS [J].
CHANGHASNAIN, CJ ;
ORENSTEIN, M ;
VONLEHMEN, A ;
FLOREZ, LT ;
HARBISON, JP ;
STOFFEL, NG .
APPLIED PHYSICS LETTERS, 1990, 57 (03) :218-220
[8]   Selective oxidation of buried AlGaAs versus AlAs layers [J].
Choquette, KD ;
Geib, KM ;
Chui, HC ;
Hammons, BE ;
Hou, HQ ;
Drummond, TJ .
APPLIED PHYSICS LETTERS, 1996, 69 (10) :1385-1387
[9]   LOW-THRESHOLD VOLTAGE VERTICAL-CAVITY LASERS FABRICATED BY SELECTIVE OXIDATION [J].
CHOQUETTE, KD ;
SCHNEIDER, RP ;
LEAR, KL ;
GEIB, KM .
ELECTRONICS LETTERS, 1994, 30 (24) :2043-2044
[10]   CONTROL OF VERTICAL-CAVITY LASER POLARIZATION WITH ANISOTROPIC TRANSVERSE CAVITY GEOMETRIES [J].
CHOQUETTE, KD ;
LEIBENGUTH, RE .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (01) :40-42