Germanium nanowire epitaxy: Shape and orientation control

被引：216

作者：

Adhikari, H

Marshall, AF

Chidsey, CED

McIntyre, PC ^{[1
]}

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Geballe Lab Adv Mat, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Chem, Stanford, CA 94305 USA

来源：

NANO LETTERS | 2006年 / 6卷 / 02期

关键词：

D O I：

10.1021/nl052231f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Epitaxial growth of nanowires along the < 111 > directions was obtained on Ge(111), Ge(110), Ge(001), and heteroepitaxial Ge on Si(001) substrates at temperatures of 350 degrees C or less by gold-nanoparticle-catalyzed chemical vapor deposition. On Ge(111), the growth was mostly vertical. In addition to < 111 > growth, < 110 > growth was observed on Ge(001) and Ge(110) substrates. Tapering was avoided by the use of the two-temperature growth procedure, reported earlier by Greytak et al.

引用

页码：318 / 323

页数：6

共 19 条

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