P-type doping of beryllium chalcogenides

被引：15

作者：

Lugauer, HJ ^{[1
]}

Fischer, F ^{[1
]}

Litz, T ^{[1
]}

Waag, A ^{[1
]}

Zehnder, U ^{[1
]}

Ossau, W ^{[1
]}

Gerhard, T ^{[1
]}

Landwehr, G ^{[1
]}

Becker, C ^{[1
]}

Kruse, R ^{[1
]}

Geurts, J ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST PHYS 1,D-52056 AACHEN,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 43卷 / 1-3期

关键词：

laser diodes; beryllium chalcogenides; molecular beam epitaxy;

D O I：

10.1016/S0921-5107(96)01838-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this contribution. we present first results on the p-type doping of beryllium-containing IT-VT compounds such as BeTe, (BeMg)Te. (BeZn)Se and (BeMgZn)Se grown by molecular beam epitaxy (MBE) using a nitrogen plasma source. These materials are a very promising alternative to ZnSSe and MgZnSSe ternaries and quaternaries, respectively. The p-type dopability of (BeMg)Te:N as determined by means of van-der-Pauw measurements and far-infrared reflectivity (FIR) spectroscopy almost exceeds that of ZnTe, and free hole concentrations N-A - N-D, of more than 1 x 10(20) cm(-1) have been readied. Heavily p-doped ternary (BeMg)Tr:N layers are obtained easily which are lattice matched to CaAs and have a high structural duality. The sheet and contact resistance of such layers have been below 5 x 10(-3) nom and 7 x 10(-3) Omega cm(2), respectively. Therefore, this material is the ideal replacement for ZnTe:NI which is used nowadays as top contact layer in ZnSe-based blue-green laser devices. (BeZn)Se and (BeMgZn)Se ternaries and quaternaries seem to behave similarly to their sulfur-containing counterparts: an increase of the band gap leads to a decrease of the free hole concentration. Several (BeMgZn)Se:(BeZn)Se single quantum well (SQW) and multiple quantum well (MQW) light-emitting devices (LEDs) have been fabricated which all show a bright, deep blue emission at low rum-an voltages. One reason for the low operating voltage is that the valence band of BeTe is aligned rather well with that of GaAs, and together with the high p-type dopability of BeTe. a smooth transition from the p-GaAs substrate to p-ZnSe via a BeTe/ZnSe pseudograding is possible. (C) 1997 Elsevier Science S.A.

引用

页码：88 / 91

页数：4

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