Inorganic nanocomposites of n- and p-type semiconductors: A new type of three-dimensional solar cell

被引：143

作者：

Nanu, M ^{[1
]}

Schoonman, J ^{[1
]}

Goossens, A ^{[1
]}

机构：

[1] Delft Univ Technol, Fac Sci Appl, Inorgan Chem Lab, NL-2628 BL Delft, Netherlands

来源：

ADVANCED MATERIALS | 2004年 / 16卷 / 05期

关键词：

D O I：

10.1002/adma.200306194

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A new approach to the '3D solar-cell concept' is reported. Atomic layer chemical vapor deposition is employed to infiltrate CuInS2 into the pores of nanostructured TiO2. In this way it is possible to obtain a nanometer-scale interpenetrating network between n-type TiO2 and p-type CuInS2. Cells created this way show photovoltaic activity with a maximum monochromatic incident photon-to-current conversion efficiency of 80%.

引用

页码：453 / +

页数：5

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