The thermal stability and electrical properties of LaErO3 films as high-k gate dielectrics

被引：10

作者：

Gao, Xu ^{[1
,2
]}

Yin, Jiang ^{[1
,2
]}

Xia, Yidong ^{[1
,3
]}

Yin, Kuibo ^{[1
,3
]}

Gao, Ligang ^{[1
,3
]}

Guo, Hongxuan ^{[1
,3
]}

Liu, Zhiguo ^{[1
,3
]}

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

[3] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2008年 / 41卷 / 23期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1088/0022-3727/41/23/235105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lanthanum erbium oxide thin films have been deposited on an Si ( 1 0 0) wafer by using the pulsed laser deposition technique. The thermal and electrical properties of LaErO(3) films were investigated by x-ray diffraction, x-ray photoelectron spectroscopy and high resolution transmission electron microscopy. Capacitance measurements reveal good C-V curves with an equivalent oxide thickness of 1.4 nm and little hysteresis. Transmission electron microscopic images reveal that the 6.5 nm LaErO(3) film shows a thin interfacial layer even after being annealed in N(2) at 700 degrees C for 30 s. X-ray photoelectron spectroscopic spectra indicate that little SiO(2) was formed at the interface during the deposition of LaErO(3) films. The measured thermal and electrical properties of the thin film suggest that the LaErO(3) film should be a promising candidate for future high-k gate dielectrics.

引用

页数：5

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