Effect of Ni doping on improvement of the tunability and dielectric loss of Ba0.5Sr0.5TiO3 thin films for microwave tunable devices

被引:27
作者
Jeon, YA [1 ]
Seo, TS [1 ]
Yoon, SG [1 ]
机构
[1] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 11期
关键词
doped BST; pulsed laser deposition; tunability; loss tangent; microwave application;
D O I
10.1143/JJAP.40.6496
中图分类号
O59 [应用物理学];
学科分类号
摘要
The structural, microstructural, and surface morphological properties of Ba0.5Sr0.5TiO3 thin films were investigated as a function of Ni dopant concentration. The Ni-dopant concentration in BST films has a strong influence on the material properties including dielectric and tunable properties as well as film growth rate, Ni doped (less than or equal to3 mol%) BST films showed denser, smoother, and smaller grain sizes than those with 6 and 12 mol% Ni. Dielectric constant and loss of 3 mol% Ni-doped BST films were about 980 and 0.3%,. respectively. In addition, tunability and figure of merit of 3 mol% doped BST films showed maximum values of approximately 39% and 108, respectively. Correlation of the material properties with dielectric and tunable properties suggests the the 3 mol% Ni-doped BST films are the optimal choice for tunable device applications.
引用
收藏
页码:6496 / 6500
页数:5
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