ac transport in ferromagnetic tunnel junctions

被引:24
作者
Chui, ST [1 ]
Hu, LB [1 ]
机构
[1] Univ Delaware, Bartol Res Inst, Newark, DE 19716 USA
关键词
D O I
10.1063/1.1430504
中图分类号
O59 [应用物理学];
学科分类号
摘要
To study possible capacitive effects, we incorporate the effect of electron interaction on the ac spin-polarized tunnelling. Under steady-state nonequilibrium conditions, the voltage-induced charge accumulated at the interface is a sum of two terms, decaying with length scales of the order of the screening length and the spin diffusion length. As a result, the effective width of the capacitor is changed by an additional term. This additional term is a function of the magnetic configurations on opposite sides of the junction and a magnetocapacitance is introduced. (C) 2002 American Institute of Physics.
引用
收藏
页码:273 / 275
页数:3
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