Carbon nanotube field-effect transistor operation at microwave frequencies

被引：58

作者：

Pesetski, AA ^{[1
]}

Baumgardner, JE ^{[1
]}

Folk, E ^{[1
]}

Przybysz, JX ^{[1
]}

Adam, JD ^{[1
]}

Zhang, H ^{[1
]}

机构：

[1] Northrop Grumman Corp, Adv Mat & Semicond Device Technol Ctr, Linthicum, MD 21090 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 11期

关键词：

D O I：

10.1063/1.2185007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A top-gated carbon nanotube (CNT) field-effect transistor (FET) was fabricated on a quartz substrate. We used a novel measurement approach and demonstrated for the first time frequency-independent performance of a CNT FET for frequencies as high as 23 GHz. This observed maximum operating frequency represents a significant breakthrough in the realization of carbon nanotube-based electronics for high frequency applications. (c) 2006 American Institute of Physics.

引用

页数：3

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