Widely tunable sampled grating DBR laser with integrated electroabsorption modulator

被引：113

作者：

Mason, B ^{[1
]}

Fish, GA ^{[1
]}

DenBaars, SP ^{[1
]}

Coldren, LA ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93103 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 06期

关键词：

buried heterostructure; distributed Bragg reflector lasers; indium phosphide; modulators; quantum-well lasers; tunable lasers; waveguide lasers;

D O I：

10.1109/68.766769

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the development of the first widely tunable semiconductor laser with an integrated electroabsorption modulator. The laser is a four-section buried-ridge sampled-grating distributed Bragg reflector design. It has a 41-nm continuous tuning range with a maximum tuning current of 23.5 mA for the back mirror and 21 mA for the front mirror, The modulator is based on a 0.87-eV bandgap bulk waveguide structure. It is capable of producing more than 22 dB of optical extinction over the entire tuning range of the laser with a -4.0-V bias.

引用

页码：638 / 640

页数：3

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