Electric-field effect on coercivity distributions in FePt magneto-electric devices

被引:13
作者
Diez, L. Herrera [1 ]
Bernand-Mantel, A. [1 ]
Michele, O. [1 ]
Vila, L. [2 ]
Warin, P. [2 ]
Marty, A. [2 ]
Ranno, L. [1 ]
Givord, D. [1 ]
机构
[1] UJF, CNRS, Inst Neel, F-38042 Grenoble 9, France
[2] UJF, CEA, INAC, SP2M, F-38054 Grenoble, France
关键词
HFO2; TEMPERATURE; TRANSITION; ANISOTROPY; OXIDE;
D O I
10.1063/1.4774382
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated the contribution of stochastic thermally activated processes to the electric-field effects on coercivity in FePt. Coercive field distributions were measured under different gate voltages in solid-state field-effect structures. For low voltages, a shift in the coercive field distribution can be observed; however, it is not larger than the width of the distribution. Higher voltages are needed to obtain the splitting from the negative (zero) voltage distribution allowing for the unambiguous characterization of the electric-field effect. A virtual unipolarity in the electric-field effect has been identified as a feature introduced by the dielectric layer that disappears upon annealing. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4774382]
引用
收藏
页数:4
相关论文
共 20 条
[1]   Thermally activated depinning of a narrow domain wall from a single defect [J].
Attané, JP ;
Ravelosona, D ;
Marty, A ;
Samson, Y ;
Chappert, C .
PHYSICAL REVIEW LETTERS, 2006, 96 (14)
[2]   Magnetoelectric Charge Trap Memory [J].
Bauer, Uwe ;
Przybylski, Marek ;
Kirschner, Juergen ;
Beach, Geoffrey S. D. .
NANO LETTERS, 2012, 12 (03) :1437-1442
[3]   Large change in perpendicular magnetic anisotropy induced by an electric field in FePd ultrathin films [J].
Bonell, F. ;
Murakami, S. ;
Shiota, Y. ;
Nozaki, T. ;
Shinjo, T. ;
Suzuki, Y. .
APPLIED PHYSICS LETTERS, 2011, 98 (23)
[4]  
Chiba D, 2011, NAT MATER, V10, P853, DOI [10.1038/nmat3130, 10.1038/NMAT3130]
[5]   Charge trapping and interface characteristics of thermally evaporated HfO2 [J].
Chowdhury, NA ;
Garg, R ;
Misra, D .
APPLIED PHYSICS LETTERS, 2004, 85 (15) :3289-3291
[6]   MAGNETOCRYSTALLINE ANISOTROPY AND ORBITAL MOMENTS IN TRANSITION-METAL COMPOUNDS [J].
DAALDEROP, GHO ;
KELLY, PJ ;
SCHUURMANS, MFH .
PHYSICAL REVIEW B, 1991, 44 (21) :12054-12057
[7]   Switching probability sub-distributions and asymmetric magnetization reversal in FePt nanostructures [J].
Diez, L. Herrera ;
Bernand-Mantel, A. ;
Ranno, L. ;
Givord, D. ;
Vila, L. ;
Warin, P. ;
Marty, A. .
NEW JOURNAL OF PHYSICS, 2012, 14
[8]   Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures [J].
Endo, M. ;
Kanai, S. ;
Ikeda, S. ;
Matsukura, F. ;
Ohno, H. .
APPLIED PHYSICS LETTERS, 2010, 96 (21)
[9]   Negative oxygen vacancies in HfO2 as charge traps in high-k stacks [J].
Gavartin, J. L. ;
Ramo, D. Munoz ;
Shluger, A. L. ;
Bersuker, G. ;
Lee, B. H. .
APPLIED PHYSICS LETTERS, 2006, 89 (08)
[10]   Chemical order and selection of the mechanism for strain relaxation in epitaxial FePd(Pt) thin layers [J].
Halley, D ;
Marty, A ;
Bayle-Guillemaud, P ;
Gilles, B ;
Attane, JP ;
Samson, Y .
PHYSICAL REVIEW B, 2004, 70 (17) :1-5