Novel chemical synthetic route and characterization of tungsten diselenide thin films

被引：24

作者：

Hankare, P. P. ^{[2
]}

Manikshete, A. H. ^{[3
]}

Sathe, D. J. ^{[1
]}

Chate, P. A. ^{[4
]}

Rathod, K. C. ^{[2
]}

机构：

[1] KITs Coll Engn, Dept Chem, Kolhapur, Maharashtra, India

[2] Shivaji Univ, Dept Chem, Solid State Lab, Kolhapur 416004, Maharashtra, India

[3] Walchand Coll, Dept Chem, Solapur, MS, India

[4] JSM Coll, Dept Chem, Alibag, MS, India

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2009年 / 113卷 / 01期

关键词：

Chalcogenides; Thin films; Electronic material; Optical material; X-ray diffraction; Crystal structure; PULSED ELECTRODEPOSITION; EFFICIENCY;

D O I：

10.1016/j.matchemphys.2008.07.040

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline WSe2 semiconductor thin films were obtained by relatively simple chemical bath deposition method using the sodium tungstate, tartaric acid, hydrazine hydrate and sodium selenosulphate as a precursor sources in an aqueous alkaline medium at room temperature. Various preparative conditions of WSe2 thin films are outlined. The grown films were found to be uniform, well adherent, brown in color. The films were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption and electrical conductivity properties. The optical study shows a direct band gap nature with band gap energy 1.48 eV, and having specific electrical conductivity of the order of 10(-2) Omega(-1) cm(-1) showing n-type conduction mechanism. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：183 / 186

页数：4

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