Current-induced metal-insulator transition in VOx thin film prepared by rapid-thermal-annealing

被引：55

作者：

Cho, CR ^{[1
]}

Cho, SI ^{[1
]}

Vadim, S ^{[1
]}

Jung, R ^{[1
]}

Yoo, I ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Device Lab, Suwon 440600, South Korea

来源：

THIN SOLID FILMS | 2006年 / 495卷 / 1-2期

关键词：

metal-insulator transition; vanadium oxide;

D O I：

10.1016/j.tsf.2005.08.241

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The phenomenon of metal-insulator transition (MIT) in polycrystalline VOx thin films and their preparations have been studied. The films were prepared by sputtering of vanadium thin films succeeded by Rapid Thermal Annealing (RTA) in oxygen ambient at 500 degrees C. Crystalline, compositional, and morphological characterizations reveal a continuous change of phase from vanadium metal to the highest oxide phase, V2O5, with the time of annealing. Electrical MIT switching has been observed in these films. Sweeping mode, electrode area, and temperature dependent MIT has been studied in Pt/VOx/Pt vertical structure. The important parameters for MIT in VOx have been found to be the current density and the electric field, which depend on carrier density in the films. (c) 2005 Published by Elsevier B.V.

引用

页码：375 / 379

页数：5

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