Properties of pulsed laser deposited CdSxTe1-x films on glass

被引：11

作者：

Compaan, AD

Feng, Z

ContrerasPuente, G

Narayanswamy, C

Fischer, A

机构：

来源：

THIN FILMS FOR PHOTOVOLTAIC AND RELATED DEVICE APPLICATIONS | 1996年 / 426卷

关键词：

D O I：

10.1557/PROC-426-367

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Interdiffusion of sulfur and tellurium across the CdS/CdTe interface is fundamentally important in the operation of CdTe solar cells. However, the properties of the resulting alloy semiconductor, CdSxTe1-x, are not well understood. We have prepared films of this ternary material by pulsed excimer laser deposition (PLD) across the alloy range. These films were examined by x-ray diffraction, wavelength dispersive x-ray spectroscopy, optical absorption, and Raman scattering to determine the influence of sulfur content on the crystal structure, lattice constant, energy gap, and vibrational mode behavior.

引用

页码：367 / 371

页数：5