Lateral MEMS microcontact considerations

被引：79

作者：

Kruglick, EJJ ^{[1
]}

Pister, KSJ ^{[1
]}

机构：

[1] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA

来源：

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | 1999年 / 8卷 / 03期

关键词：

contact physics; microrelay; plastic deformation; relay; tribology;

D O I：

10.1109/84.788630

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A lateral switching relay structure has been developed which provides a double gold contact with as low as 70-m Ohm measured contact resistance, 0.45-A current-carrying ability at MEMS compatible force levels, TTL compatible actuation, and air gap isolation when open. The die area used for the relay mechanism itself (distinct from the actuation) is approximately 75 mu m by 100 mu m and was designed to allow fabrication of the relays in the MCNC MUMP's dual polysilicon foundry process with no assembly. Design analysis shows that substantial characterization is needed to design optimal microrelays. Temperature softening and failure modes have been characterized by current voltage techniques. Polysilicon vernier structures were used to develop force/current/conductance curves. Relays using thermal actuators have been built.

引用

页码：264 / 271

页数：8

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