Energy barrier height for electron injection in organic electroluminescent devices with dithienosilole

被引：11

作者：

Adachi, A

Ohshita, J

Kunai, A

Okita, K

机构：

[1] Japan Chem Innovat Inst, Adv Mat Lab, Tsukuba, Ibaraki 3050047, Japan

[2] Hiroshima Univ, Fac Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 4A期

关键词：

electroluminescence; aluminum complex; Shottky emission; dithienosilole derivatives;

D O I：

10.1143/JJAP.38.2148

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the relationship between electroluminescent (EL) device performance and electron injection properties on the basis of the Schottky emission model. The EL device with dithienosilole derivatives (DTS) as an electron injection layer has a lower energy barrier (0.33 eV) for electron injection from magnesium compared to that (0.43 eV) of a typical EL device without DTS. This may lead to the improvement in the electrical properties of the EL device with DTS.

引用

页码：2148 / 2149

页数：2

共 6 条

[1] Multilayer organic electroluminescent device with dithienosilole derivative [J].