Development of an assembly process and reliability investigations for flip-chip LEDs using the AuSn soldering

被引：61

作者：

Elger, G

Hutter, M

Oppermann, H

Aschenbrenner, R

Reichl, H

Jäger, E

机构：

[1] Fraunhofer IZM, D-13355 Berlin, Germany

[2] EPIGAP Optoelekt GmbH, D-12255 Berlin, Germany

来源：

MICROSYSTEM TECHNOLOGIES | 2002年 / 7卷 / 5-6期

关键词：

Silicon; Silicon Substrate; Assembly Process; Intermetallic Phasis; Substrate Wafer;

D O I：

10.1007/s005420100103

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A packaging process for flip-chip LEDs (light emitting diodes) is described. The LEDs are picked and placed on a silicon substrate wafer. After reflow the substrates are individualized. AuSn solder is used for the interconnection. The solder compounds, Au and Sn, are electroplated separately: Sn on the silicon substrate and Au on the chip. The interconnections formed by tin-rich and by gold-rich intermetallic phases are compared. The metallurgy and the reliability of the LEDs are investigated. The superiority of the gold-rich interconnection is demonstrated.

引用

页码：239 / 243

页数：5