Bi/Sb superlattices grown by molecular beam epitaxy

被引:6
作者
Cho, SL [1 ]
Kim, Y
DiVenere, A
Wong, GK
Ketterson, JB
Hong, JI
机构
[1] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA
[2] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[3] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China
[4] Northwestern Univ, Dept Elect & Comp Engn, Evanston, IL 60208 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1999年 / 17卷 / 05期
关键词
D O I
10.1116/1.581971
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Epitaxial Bi/Sb superlattices have been grown by molecular beam epitaxy on CdTe(111)B substrates. The superlattice modulation wavelength was in the range of 20-200 Angstrom. Structural properties have been investigated using in situ reflection high-energy electron diffraction (RHEED), theta - 2 theta x-ray diffraction (XRD) analysis, and high-resolution transmission electron microscopy (TEM). The streaked RHEED patterns of Bi on Sb (or Sb on Bi) with clear Kikuchi lines indicate layer-by-layer growth with good epitaxial layer quality. The narrow XRD rocking curves for the central and the satellite peaks suggest that the interfaces are very sharp and that the superlattice periods do not fluctuate, which is demonstrated in this article by cross-sectional TEM. (C) 1999 American Vacuum Society. [S0734-2101(99)01905-3].
引用
收藏
页码:2987 / 2990
页数:4
相关论文
共 15 条
[1]   Thermoelectric power of MBE grown Bi thin films and BI/CDTE superlattices on CdTe substrates [J].
Cho, S ;
DiVenere, A ;
Wong, GK ;
Ketterson, JB ;
Meyer, JR ;
Hoffman, CA .
SOLID STATE COMMUNICATIONS, 1997, 102 (09) :673-676
[2]   Growth-mode modification of Bi on CdTe(111)A using Te monolayer deposition [J].
Cho, SL ;
DiVenere, A ;
Wong, GK ;
Ketterson, JB ;
Meyer, JR ;
Hong, JI .
PHYSICAL REVIEW B, 1998, 58 (04) :2324-2328
[3]  
DEFONTAINE D, 1966, LOCAL ATOMIC ARRANGE
[4]   POLARITY INVERSION OF CDTE(111) ORIENTATION GROWN ON BI (00.1) BY MOLECULAR-BEAM EPITAXY [J].
DIVENERE, A ;
YI, XJ ;
HOU, CL ;
WANG, HC ;
KETTERSON, JB ;
WONG, GK ;
SOU, IK .
APPLIED PHYSICS LETTERS, 1993, 62 (21) :2640-2642
[5]   GROWTH OF THE BI-SB SUPERLATTICE [J].
GLADYSZEWSKI, G ;
MIKOLAJCZAK, P ;
MITURA, Z ;
SUBOTOWICZ, M .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (42) :7795-7800
[6]  
Guinier A., 1963, XRAY DIFFRACTION CRY
[7]   TEMPERATURE DEPENDENCE OF THE ELECTRICAL PROPERTIES OF BISMUTH-ANTIMONY ALLOYS [J].
JAIN, AL .
PHYSICAL REVIEW, 1959, 114 (06) :1518-1528
[8]   SYNTHESIS OF BI/SB MULTILAYER STRUCTURES [J].
JALOCHOWSKI, M .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 95 (01) :K5-K8
[9]   Transport properties of Bi-rich Bi-Sb alloys [J].
Lenoir, B ;
Cassart, M ;
Michenaud, JP ;
Scherrer, H ;
Scherrer, S .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1996, 57 (01) :89-99
[10]   GALVANOMAGNETIC PROPERTIES OF SINGLE-CRYSTAL BISMUTH-ANTIMONY THIN-FILMS [J].
MORELLI, DT ;
PARTIN, DL ;
HEREMANS, J .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 :S257-S259