Surface photovoltage measurements in liquids

被引:19
作者
Bastide, S [1 ]
Gal, D
Cahen, D
Kronik, L
机构
[1] Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel
[2] Tel Aviv Univ, Dept Phys Elect, IL-69978 Ramat Aviv, Israel
关键词
D O I
10.1063/1.1150030
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We present a simple, compact, and robust arrangement for surface photovoltage measurements of free semiconductor surfaces immersed in liquids. It is based on the classical Kelvin probe arrangement, where the semiconductor sample is put in a liquid-containing, electrically insulating vessel, with an optically transparent window, situated between the sample and the Kelvin probe. At the price of permitting relative, rather than absolute, contact potential difference values, this modification enables easy, routine surface photovoltage measurements of semiconductors in any kind of liquid ambient. The validity and efficiency of this approach are demonstrated by surface photovoltage spectra obtained from the p-InP(100) surface in various liquid etchants. (C) 1999 American Institute of Physics. [S0034- 6748(99)03910-6].
引用
收藏
页码:4032 / 4036
页数:5
相关论文
共 34 条
[1]   ANALYSIS OF STRAY CAPACITANCE IN THE KELVIN METHOD [J].
BAIKIE, ID ;
VENDERBOSCH, E ;
MEYER, JA ;
ESTRUP, PJZ .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1991, 62 (03) :725-735
[2]   Controlling the work function of GaAs by chemisorption of benzoic acid derivatives [J].
Bastide, S ;
Butruille, R ;
Cahen, D ;
Dutta, A ;
Libman, J ;
Shanzer, A ;
Sun, LM ;
Vilan, A .
JOURNAL OF PHYSICAL CHEMISTRY B, 1997, 101 (14) :2678-2684
[3]   PIEZOELECTRIC DRIVEN KELVIN PROBE FOR CONTACT POTENTIAL DIFFERENCE STUDIES [J].
BESOCKE, K ;
BERGER, S .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1976, 47 (07) :840-842
[4]  
BRATTAIN WH, 1953, AT&T TECH J, V32, P1
[5]   CHEMICAL-REACTIONS AND LOCAL CHARGE REDISTRIBUTION AT METAL-CDS AND CDSE INTERFACES [J].
BRILLSON, LJ .
PHYSICAL REVIEW B, 1978, 18 (06) :2431-2446
[6]   SURFACE PHOTOVOLTAGE AND ELECTRON ENERGY-LOSS SPECTROSCOPY OF OXYGEN ADSORBED ON (1120) CDSE [J].
BRILLSON, LJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :325-328
[7]   POLAR LIGAND ADSORPTION CONTROLS SEMICONDUCTOR SURFACE-POTENTIALS [J].
BRUENING, M ;
MOONS, E ;
YARONMARCOVICH, D ;
CAHEN, D ;
LIBMAN, J ;
SHANZER, A .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1994, 116 (07) :2972-2977
[8]   CHARACTERIZATION OF INTERFACE STATES AT III-V COMPOUND SEMICONDUCTOR-METAL INTERFACES [J].
BURSTEIN, L ;
BREGMAN, J ;
SHAPIRA, Y .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) :2312-2316
[9]   DETERMINATION OF UNDOPED CDTE(111) SURFACE POLARITY BY SURFACE PHOTOVOLTAGE SPECTROSCOPY [J].
BURSTEIN, L ;
SHAPIRA, Y ;
MOONS, E ;
CAHEN, D .
APPLIED SURFACE SCIENCE, 1994, 74 (02) :201-206
[10]   Controlling electronic properties of CdTe by adsorption of dicarboxylic acid derivatives: Relating molecular parameters to band bending and electron affinity changes [J].
Cohen, R ;
Bastide, S ;
Cahen, D ;
Libman, J ;
Shanzer, A ;
Rosenwaks, Y .
ADVANCED MATERIALS, 1997, 9 (09) :746-749