Annealing effects on the optical and structural properties of Al2O3/SiO2 films as UV antireflection coatings on 4H-SiC substrates

被引：24

作者：

Zhang, Feng ^{[1
]}

Yang, Weifeng ^{[1
]}

Pang, Aisuo ^{[1
]}

Wu, Zhengyun ^{[1
]}

Qi, Hongji ^{[2
]}

Yao, Jianke ^{[2
]}

Fan, Zhengxiu ^{[2
]}

Shao, Jianda ^{[2
]}

机构：

[1] Xiamen Univ, Dept Phys, Xiamen 361005, Fujian, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 20期

关键词：

annealing; Al2O3/SiO2; films; 4H-SiC; external quantum efficiency;

D O I：

10.1016/j.apsusc.2008.04.015

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Al2O3/SiO2 films have been prepared by electron-beam evaporation as ultraviolet (UV) antireflection coatings on 4H-SiC substrates and annealed at different temperatures. The films were characterized by reflection spectra, ellipsometer system, atomic force microscopy (AFM), X-ray diffraction (XRD) and Xray photoelectron spectroscopy (XPS), respectively. As the annealing temperature increased, the minimum reflectance of the films moved to the shorter wavelength for the variation of refractive indices and the reduction of film thicknesses. The surface grains appeared to get larger in size and the root mean square (RMS) roughness of the annealed films increased with the annealing temperature but was less than that of the as-deposited. The Al2O3/SiO2 films maintained amorphous in microstructure with the increase of the temperature. Meanwhile, the transition and diffusion in film component were found in XPS measurement. These results provided the important references for Al2O3/SiO2 films annealed at reasonable temperatures and prepared as fine anti-reflection coatings on 4H-SiC-based UV optoelectronic devices. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：6410 / 6415

页数：6

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