Infrared spectroscopic study of phonons coupled to charge excitations in FeSi

被引:84
作者
Damascelli, A [1 ]
Schulte, K [1 ]
vanderMarel, D [1 ]
Menovsky, AA [1 ]
机构
[1] UNIV AMSTERDAM, VAN DER WAALS ZEEMAN LAB, NL-1018 XE AMSTERDAM, NETHERLANDS
关键词
D O I
10.1103/PhysRevB.55.R4863
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
From an investigation of the optical conductivity of FeSi single crystals using Fourier-transform infrared spectroscopy in the frequency range from 30 to 20 000 cm-l we conclude that the transverse effective charge of the Fe and Si ions is approximately 4e. Of the five optical phonons that are allowed by symmetry we observe only four, three of which have a Fano line shape presumably resulting from an interaction of these modes with the electronic continuum. We show that the large oscillator strength of the phonons results from a relatively weak coupling (lambda approximate to 0.1) of the lattice degrees of freedom to an electronic resonance above the semiconductor gap, which is also responsible for the large electronic polarizability (epsilon(infinity)approximate to 200) of the medium.
引用
收藏
页码:R4863 / R4866
页数:4
相关论文
共 17 条
[1]  
AEPPLI G, 1994, STRONGLY CORRELATED ELECTRONIC MATERIALS - THE LOS ALAMOS SYMPOSIUM, 1993, P3
[2]   Singlet semiconductor to ferromagnetic metal transition in FeSi [J].
Anisimov, VI ;
Ezhov, SY ;
Elfimov, IS ;
Solovyev, IV ;
Rice, TM .
PHYSICAL REVIEW LETTERS, 1996, 76 (10) :1735-1738
[3]   OPTICAL EVIDENCE OF ANDERSON-MOTT LOCALIZATION IN FESI [J].
DEGIORGI, L ;
HUNT, MB ;
OTT, HR ;
DRESSEL, M ;
FEENSTRA, BJ ;
GRUNER, G ;
FISK, Z ;
CANFIELD, PC .
EUROPHYSICS LETTERS, 1994, 28 (05) :341-346
[4]  
DEGROOT RA, UNPUB
[5]   EFFECTS OF CONFIGURATION INTERACTION ON INTENSITIES AND PHASE SHIFTS [J].
FANO, U .
PHYSICAL REVIEW, 1961, 124 (06) :1866-&
[6]  
Fateley W.G., 1972, INFRARED RAMAN SELEC
[7]   ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF FESI, A STRONGLY CORRELATED INSULATOR [J].
FU, C ;
KRIJN, MPCM ;
DONIACH, S .
PHYSICAL REVIEW B, 1994, 49 (03) :2219-2222
[8]   PARAMAGNETIC EXCITED STATE OF FESI [J].
JACCARINO, V ;
WERTHEIM, GK ;
WERNICK, JH ;
WALKER, LR ;
ARAJS, S .
PHYSICAL REVIEW, 1967, 160 (03) :476-+
[9]   EFFECTS OF RESONANCE BONDING ON PROPERTIES OF CRYSTALLINE AND AMORPHOUS SEMICONDUCTORS [J].
LUCOVSKY, G ;
WHITE, RM .
PHYSICAL REVIEW B, 1973, 8 (02) :660-667
[10]   THERMODYNAMICS OF FESI [J].
MANDRUS, D ;
SARRAO, JL ;
MIGLIORI, A ;
THOMPSON, JD ;
FISK, Z .
PHYSICAL REVIEW B, 1995, 51 (08) :4763-4767