Effect of synthesis conditions on the metal-semiconductor phase transition in vanadium dioxide thin films

被引：40

作者：

Aliev, RA

Klimov, VA

机构：

[1] Russian Acad Sci, Dagestan Sci Ctr, Amirkhanov Inst Phys, Makhachkala 367003, Russia

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

PHYSICS OF THE SOLID STATE | 2004年 / 46卷 / 03期

关键词：

D O I：

10.1134/1.1687874

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of the conditions of synthesis and of the substrate material on the metal-semiconductor phase transition in thin vanadium dioxide films prepared using laser ablation has been studied. The broadening of the hysteresis loop is shown to be due to a decrease in the size of the crystal grains making up the film. Conjectures are put forward to explain the formation of asymmetric hysteresis loops. (C) 2004 MAIK "Nauka / Interperiodica".

引用

页码：532 / 536

页数：5

共 14 条

[1]

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[2]

Andreev V. N., 1993, Technical Physics Letters, V19

[3]

ANDREEV VN, 1994, JETP LETT+, V60, P647

[4]

BUGAEV AA, 1979, METAL SEMICONDUCTOR