Preparation of silicon oxycarbide ceramic films by pyrolysis of polymethyl- and polyvinylsilsesquioxanes

被引：48

作者：

Takamura, N ^{[1
]}

Taguchi, K ^{[1
]}

Gunji, T ^{[1
]}

Abe, Y ^{[1
]}

机构：

[1] Sci Univ Tokyo, Fac Sci & Technol, Dept Ind Chem, Chiba 2788510, Japan

来源：

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 1999年 / 16卷 / 03期

关键词：

polysilsesquioxane; precursor; pyrolysis; silicon oxycarbide; ceramics; films;

D O I：

10.1023/A:1008765103113

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The sol-gel reactions of methyl- and vinyltrimethoxysilane under controlled conditions provided the corresponding polysilsesquioxanes and flexible thin films on further condensation of the precursors. Silicon oxycarbides containing a large amount of free carbon 58 mol% and 90 mol% were obtained in high yields 90 wt% on pyrolyzing the precursors of polymethyl-and polyvinylsilsesquioxane at 1400 degrees C under N-2 atmosphere, respectively. Moreover, pyrolytic polycondensation of polyvinylsilsesquioxane was found to give the silicon oxycarbide ceramic films without deformations and cracks. The composition and properties of films were investigated.

引用

页码：227 / 234

页数：8

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