The effects of pulsing the current in galvanostatic electrodeposition technique on the composition and surface morphology of In-Se films

In-Se films were electrodeposited on titanium-coated glass substrates from a mixture of indium chloride and selenium oxide in aqueous solution by the galvanostatic electrodeposition technique using pulse current. The effects of the pulse duration t(dur) and the pulse interval t(int) on the composition, homogeneity and surface morphology of films were studied. The characteristics of the films were studied by scanning electron microscopy, energy dispersive X-ray spectroscopy, surface profile measurement and X-ray diffraction using Cu K alpha line. As a result, we found that the homogeneity of composition in films were improved by using a pulse current with a proper combination of a t(dur) with a t(int), and that the homogeneous films with an indium content of about 50 at% were deposited at t(dur) Of 5 s combined with t(int) ranging from 10 to 20 s, and that the (001) oriented InSe films were obtained by annealing these films at 400 degrees C for 30 min in a static argon atmosphere.