Characterisation of titanium nitride thin films prepared using PVD and a plasma immersion ion implantation system

We compare two titanium nitride films deposited on silicon using PVD. One was produced with the aid of a pulsed high voltage power supply which is attached to the substrate holder. The stoichiometry and structure of the samples was investigated using Rutherford backscattering spectroscopy and cross-sectional TEM. It was found that while the stoichiometry of the two samples were comparable, there was a difference in the preferred orientation of the films. A change in orientation was observed from (1 1 1) to (2 0 0) as the pulsed high voltage power supply was applied. This change in orientation indicates that the intrinsic stress level in the film has been reduced which may allow the growth of thicker coatings. (C) 2002 Elsevier Science B.V. All rights reserved.