Valence band offset in HgTe/Hg1-xCdxTe superlattices

被引：4

作者：

Becker, CR ^{[1
]}

Latussek, V ^{[1
]}

Li, M ^{[1
]}

Pfeuffer-Jeschke, A ^{[1
]}

Landwehr, G ^{[1
]}

机构：

[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1999年 / 28卷 / 06期

关键词：

HgTe/Hg(1-x)Cd(x)Te; molecular beam epitaxy (MBE); optical properties; superlattice; valence band offset;

D O I：

10.1007/s11664-999-0078-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The valence band offset (Lambda) between HgTe and CdTe has been determined by means of an optical investigation of (112)B oriented HgTe/Hg(1-x)Cd(x)Te superlattices. Based on the fact that the difference in energy between the first heavy hole and the first light hole subband is to a good approximation due primarily to Lambda, it has been shown that Lambda = 580 +/- 40 meV at 5K. In addition Lambda has a significant temperature dependence with a linear coefficient of -0.34 +/- 0.02 meV/K, i.e., Lambda is 480 + /- 40 meV at room temperature.

引用

页码：826 / 829

页数：4

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