Highly oriented and conducting ZnO:Ga layers grown by chemical spray pyrolysis

被引：74

作者：

Reddy, KTR ^{[1
]}

Reddy, TBS

Forbes, I

Miles, RW

机构：

[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India

[2] Northumbria Univ, Sch Engn, Newcastle Upon Tyne NE1 8ST, Tyne & Wear, England

来源：

SURFACE & COATINGS TECHNOLOGY | 2002年 / 151卷 / 151-152期

基金：

英国工程与自然科学研究理事会;

关键词：

zinc oxide; spray pyrolysis; gallium doping; substrate temperature;

D O I：

10.1016/S0257-8972(01)01593-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Highly conducting and transparent gallium doped zinc oxide (ZnO:Ga) layers have been deposited using a spray pyrolysis process. The films were deposited on Corning 7059 glass substrates at different temperatures and gallium doping concentrations, keeping the other deposition parameters constant. The ZnO:Ga films grown at a substrate temperature of 350 degreesC with a gallium doping concentration of 5.0 at.% had the best physical properties. These layers were highly oriented along the <002> with a grain size of 98 nm. The films were n-conductivity type with an electrical conductivity of 1.32 x 10(3) Omega(-1)cm(-1). The transmittance of these films was higher than 85% in the visible region with a high reflectance in the infra-red region. The figure of merit evaluated was 3.4 x 10(-2) Omega(-1). (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：110 / 113

页数：4

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