A Physically Transient Form of Silicon Electronics

被引:1038
作者
Hwang, Suk-Won [2 ,3 ]
Tao, Hu [1 ]
Kim, Dae-Hyeong [4 ]
Cheng, Huanyu [5 ,6 ]
Song, Jun-Kyul [7 ]
Rill, Elliott [2 ,3 ]
Brenckle, Mark A. [1 ]
Panilaitis, Bruce [1 ]
Won, Sang Min [8 ]
Kim, Yun-Soung [2 ,3 ]
Song, Young Min [2 ,3 ]
Yu, Ki Jun [8 ]
Ameen, Abid [2 ,3 ]
Li, Rui [5 ,6 ,9 ]
Su, Yewang [5 ,6 ]
Yang, Miaomiao [1 ]
Kaplan, David L. [1 ]
Zakin, Mitchell R. [10 ]
Slepian, Marvin J. [11 ,12 ]
Huang, Yonggang [5 ,6 ]
Omenetto, Fiorenzo G. [1 ,13 ]
Rogers, John A. [2 ,3 ,7 ,8 ]
机构
[1] Tufts Univ, Dept Biomed Engn, Medford, MA 02155 USA
[2] Univ Illinois, Dept Mat Sci & Engn, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA
[3] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
[4] Seoul Natl Univ, Sch Chem & Biol Engn, Ctr Nanoparticle Res,Inst Basic Sci, WCU Program Chem Convergence Energy & Environm, Seoul 151741, South Korea
[5] Northwestern Univ, Dept Mech Engn, Evanston, IL 60208 USA
[6] Northwestern Univ, Dept Civil & Environm Engn, Evanston, IL 60208 USA
[7] Univ Illinois, Dept Chem, Urbana, IL 61801 USA
[8] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[9] Dalian Univ Technol, State Key Lab Struct Anal Ind Equipment, Dept Engn Mech, Dalian 116024, Peoples R China
[10] Nano Terra, Brighton, MA 02135 USA
[11] Univ Arizona, Dept Med, Sarver Heart Ctr, Tucson, AZ 85724 USA
[12] Univ Arizona, Dept Biomed Engn, Sarver Heart Ctr, Tucson, AZ 85724 USA
[13] Tufts Univ, Dept Phys, Medford, MA 02155 USA
基金
美国国家科学基金会; 美国国家卫生研究院;
关键词
CRYSTALLINE SILICON; SILK FIBROIN; OXIDE;
D O I
10.1126/science.1226325
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
A remarkable feature of modern silicon electronics is its ability to remain physically invariant, almost indefinitely for practical purposes. Although this characteristic is a hallmark of applications of integrated circuits that exist today, there might be opportunities for systems that offer the opposite behavior, such as implantable devices that function for medically useful time frames but then completely disappear via resorption by the body. We report a set of materials, manufacturing schemes, device components, and theoretical design tools for a silicon-based complementary metal oxide semiconductor (CMOS) technology that has this type of transient behavior, together with integrated sensors, actuators, power supply systems, and wireless control strategies. An implantable transient device that acts as a programmable nonantibiotic bacteriocide provides a system-level example.
引用
收藏
页码:1640 / 1644
页数:6
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