Effect of nitrogen incorporation in CNx thin films deposited by RF magnetron sputtering

被引：26

作者：

Mubumbila, N ^{[1
]}

Tessier, PY ^{[1
]}

Angleraud, B ^{[1
]}

Turban, G ^{[1
]}

机构：

[1] Univ Nantes, CNRS, UMR 6502, Inst Mat Jean Rouxel,Lab Plasmas & Couches Minces, F-44322 Nantes 3, France

来源：

SURFACE & COATINGS TECHNOLOGY | 2002年 / 151卷

关键词：

carbon nitride; thin films; magnetron sputtering;

D O I：

10.1016/S0257-8972(01)01569-9

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Carbon nitride thin films were deposited by RF magnetron sputtering of a graphite target in a pure N-2 or mixed Ar/N-2 plasma. The effect of nitrogen incorporation on the growth kinetics, composition, structure and type of bonding of CNx films in a large range of N-2 pressure (0.5-40 Pa) and N-2 fraction in the discharge gas mixture was studied. Observations by scanning electron microscopy (SEM) of the film cross-sections revealed different morphologies depending on the N-2 pressure. Transmission electron microscopy (TEM) measurements revealed that the CNx films were amorphous. By changing the deposition conditions, the N/C ratio, deduced from XPS analysis, varied from 0 to a maximum value of 0.7. Various chemical bonds for C and N atoms were found by curve fitting of N 1s and C 1s XPS peaks and by study of FTIR spectra. The optical properties of these materials were also investigated using UV-Vis-NIR absorption. (C)2002 Elsevier Science B.V. All rights reserved.

引用

页码：175 / 179

页数：5

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