UHREM investigation of stacking fault interactions in the CVD diamond structure

被引:11
作者
Delclos, S
Dorignac, D
Phillipp, F
Moulin, S
Bonnot, AM
机构
[1] CNRS, Ctr Elaborat Mat & Etud Struct, F-31055 Toulouse 4, France
[2] Max Planck Inst Met Forsch, Inst Phys, D-70569 Stuttgart, Germany
[3] CNRS, Etud Proprietes Elect Solides Lab, F-38042 Grenoble 9, France
关键词
chemical vapour deposition; local structure; thin diamond films; ultra-high resolution electron microscopy;
D O I
10.1016/S0925-9635(98)00255-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An investigation of complex defect configurations arising from the interaction between stacking faults in diamond thin films prepared by thermal-enhanced chemical vapour deposition (CVD) on silicon substrates is reported. The defects have been determined by ultra-high resolution electron microscopy (UHREM) at 0.12 nm resolution. Extensive image simulation has been used to deduce their detailed core structures and to propose plausible 3D atomic-scale models. Two particularly interesting examples are shown: the first consists of intrinsic and extrinsic stacking faults intersecting to form two opposite stair-rod dislocations, while the second results from the interaction between adjacent extrinsic stacking faults and a parallel twin interface. To our knowledge, this is the first time that such types of extended defect configurations, which are quite representative of the dominant defect structures in CVD diamond, have been reported. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:682 / 687
页数:6
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