Negative capacitance caused by electron injection through interfacial states in organic light-emitting diodes

被引:189
作者
Bisquert, J [1 ]
Garcia-Belmonte, G
Pitarch, A
Bolink, HJ
机构
[1] Univ Jaume 1, Dept Ciencies Expt, Castellon de La Plana 12071, Spain
[2] Univ Valencia, Inst Ciencia Mol, Valencia 46980, Spain
关键词
D O I
10.1016/j.cplett.2006.02.060
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The negative capacitance frequently observed at low frequencies in organic light-emitting diodes (LEDs) is explained as a signature of sequential electron injection at the organic/metal interface first to states in the bandgap in the dipole layer and then to bulk states. The negative capacitance occurs when the interfacial states depart from equilibrium with the metal Fermi level due to an increasing rate of hopping to the bulk states. A simple kinetic model compares well with the experimental results and provides a new tool to investigate interfacial properties for improving the performance of organic LEDs. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:184 / 191
页数:8
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