High-temperature, high-voltage operation of pulse-doped diamond MESFET

被引：41

作者：

Vescan, A

Gluche, P

Ebert, W

Kohn, E

机构：

[1] Dept. of Electron Devices and Circt., University of Ulm

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 05期

关键词：

D O I：

10.1109/55.568772

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication and operation of a pulse-doped diamond metal-semiconductor field-effect transistor (MESFET) is presented showing a usable source drain voltage of 70 V and no breakdown up to 100 V at 350 degrees C operating temperature. A channel sheet concentration of 8.5 x 10(12) cm(-2) could be fully modulated leading to a maximum transconductance of 0.22 mS/mm, although full activation of the boron acceptor had not been reached, For an optimized device structure, with seduced gate length below 0.25 mu m and full activation, more than 10 W/mm RF-power density can be predicted.

引用

页码：222 / 224

页数：3

共 9 条

[1] ELECTRICAL CHARACTERIZATION OF HOMOEPITAXIAL DIAMOND FILMS DOPED WITH B, P, LI AND NA DURING CRYSTAL-GROWTH [J].