Direct-current generation due to wave mixing in semiconductors

被引：39

作者：

Alekseev, KN ^{[1
]}

Erementchouk, MV

Kusmartsev, FV

机构：

[1] Russian Acad Sci, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia

[2] Loughborough Univ Technol, Sch Math & Phys Sci, Loughborough LE11 3TU, Leics, England

[3] Russian Acad Sci, LD Landau Theoret Phys Inst, Chernogolovka 142432, Russia

来源：

EUROPHYSICS LETTERS | 1999年 / 47卷 / 05期

关键词：

D O I：

10.1209/epl/i1999-00430-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We describe an effect of the generation of direct current which may arise in semiconductors or semiconductor microstructures due to a mixing of coherent electromagnetic radiations of commensurate frequencies. The effect is, in essence, due to a nonparabolicity of the electron energy bands and is stronger in systems where this nonparabolicity is greater. We have made exact calculations in the framework of the Kane model, applicable to narrow-gap semiconductors and the tight-binding model which we employ for a description of a semiconductor superlattice.

引用

页码：595 / 600

页数：6

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