High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method

被引：79

作者：

Jenny, JR ^{[1
]}

Müller, STG ^{[1
]}

Powell, A ^{[1
]}

Tsvetkov, VF ^{[1
]}

Hobgood, HM ^{[1
]}

Glass, RC ^{[1
]}

Carter, CH ^{[1
]}

机构：

[1] Cree Inc, Durham, NC 27703 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2002年 / 31卷 / 05期

关键词：

high-purity semi-insulating; HPSI; 4H-SiC; seeded sublimation; physical vapor transport; SIMS; EPR; resistivity; thermal conductivity;

D O I：

10.1007/s11664-002-0084-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The growth of high-purity, semi-insulating (HPSI) 4H-SiC crystals has been achieved using the seeded-sublimation growth technique. These semi-insulating (SI) crystals (2-inch diameter) were produced without the intentional introduction of elemental deep-level dopants, such as vanadium, and wafers cut from these crystals possess room-temperature resistivities greater than 10(9) Omegacm, Based upon temperature-dependent resistivity measurements, the SI behavior is characterized by several activation energies ranging from 0.9-1.5 eV. Secondary ion mass spectroscopy (SIMS) and electron paramagnetic resonance (EPR) data suggest that the SI behavior originates from deep levels associated with intrinsic point defects. Typical micropipe densities for wafers were between 30 cm(-2) and 150 cm(-2). The room-temperature thermal conductivity of this material is near the theoretical maximum of 5 W/mK for 4H-SiC, making these wafers suitable for high-power microwave applications.

引用

页码：366 / 369

页数：4

共 16 条

[1] THIN-FILM DEPOSITION AND MICROELECTRONIC AND OPTOELECTRONIC DEVICE FABRICATION AND CHARACTERIZATION IN MONOCRYSTALLINE ALPHA AND BETA SILICON-CARBIDE [J].