A new "critical-current at linear-threshold" method for direct extraction of deep-submicron MOSFET effective channel length

A novel method for direct extraction of deep-submicron MOSFET effective channel length is proposed, which requires only a single measurement of the "critical-current at linear-threshold" ("I-crit @ V-to") based on the maximum-g(m) definition. With a simple calibration of the channel sheet resistance from the long-channel I-crit data, the effective channel length of any short-channel device on the same wafer can be determined with one measurement of I(cri)t @ V-to Meanwhile, an averaged (modeled) effective channel length can be obtained from the same data set with a simple algorithm, which can be used for device/circuit modeling.