Combination lithography for photonic-crystal circuits

被引:11
作者
Schneider, GJ [1 ]
Murakowski, J [1 ]
Venkataraman, S [1 ]
Prather, DW [1 ]
机构
[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 01期
关键词
D O I
10.1116/1.1637915
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We propose and demonstrate a process for fabricating large-area photonic-crystal slabs with designed defects. The process takes advantage of a property we have observed in certain photoresists. These resists, which under ultraviolet illumination exhibit positive tone, behave as negative resists under electron-beam exposure. Electron-beam exposure is used first to expose defect structures, which renders them insensitive to further exposure. Subsequently, a large area is exposed with a photonic-crystal structure consisting of a regular pattern of holes defined by the interference between several ultraviolet laser beams. Upon chemical developing, a large photonic-crystal region with local patterned defects is created in the resist. The patterned resist is used as an etch mask for etching a slab of high-refractive-index material. In this article, we describe the fabrication process and present fabricated structures. (C) 2004 American Vacuum Society.
引用
收藏
页码:146 / 151
页数:6
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