Hydrogen incorporation, bonding and stability in nanocrystalline diamond films

被引：18

作者：

Ballutaud, D. ^{[1
]}

Kociniewski, T. ^{[1
]}

Vigneron, J. ^{[2
]}

Simon, N. ^{[2
]}

Girard, H. ^{[2
]}

机构：

[1] Gemac CNRS, Paris, France

[2] Univ Versailles St Quentin Yvelines, Inst Lavoisier, Versailles, France

来源：

关键词：

nanocrystalline diamond; hydrogen; X-ray photoelectron spectroscopy; Raman spectroscopy;

D O I：

10.1016/j.diamond.2008.01.067

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The hydrogen concentration in hot filament and microwave plasma CVD nanocrystalline diamond films is analysed by secondary ion mass spectrometry and compared to the film grain size. The surface and bulk film carbon bonds are analysed respectively by X-ray photoelectron spectroscopy (XPS) and ultra-violet Raman spectroscopy. XPS results show the presence of the hydrogenated p-type surface conductive layer. The respective intensities of the 1332 cm(-1) diamond peak, of the G and D bands related to sp(2) phases, and of the 3000 cm(-1) CH, stretching mode band, are compared on Raman spectra. The samples are submitted to thermal annealing under ultra-high vaccum in order to get hydrogen out-diffusion. XPS analysis shows the surface desorption of hydrogen. Thermal annealing modifies the sp(2) phase structure as hydrogen out diffuses. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1127 / 1131

页数：5

共 13 条

[1] Photoelectron spectroscopy of hydrogen at the polycrystalline diamond surface [J].