Efficient decomposition of environmentally persistent perfluorooctanesulfonate and related fluorochemicals using zerovalent iron in subcritical water

被引:251
作者
Hori, H
Nagaoka, Y
Yamamoto, A
Sano, T
Yamashita, N
Taniyasu, S
Kutsuna, S
Osaka, I
Arakawa, R
机构
[1] AIST, Tsukuba, Ibaraki 3058569, Japan
[2] Kansai Univ, Fac Engn, Dept Appl Chem, Suita, Osaka 5648680, Japan
关键词
D O I
10.1021/es0517419
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Decomposition of perfluorooctanesulfonate (PFOS) and related chemicals in subcritical water was investigated. Although PFOS demonstrated little reactivity in pure subcritical water, addition of zerovalent metals to the reaction system enhanced the PFOS decomposition to form F- ions, with an increasing order of activity of no metal approximate to Al < Cu < Zn << Fe. Use of iron led to the most efficient PFOS decomposition: When iron powder was added to an aqueous solution of PFOS (93-372 mu M) and the mixture was heated at 350 degrees C for 6 h, PFOS concentration in the reaction solution fell below 2.2 mu M (detection limit of HPLC with conductometric detection), with formation of F- ions with yields [i.e., (moles of F- formed)/(moles of fluorine content in initial PFOS) x 100] of 46.2-51.4% and without any formation of perfluorocarboxylic acids. A small amount of CHF3 was detected in the gas phase with a yield [i.e., (moles of CHF3)/(moles of carbon content in initial PFOS) x 100] of 0.7%, after the reaction of PFOS (372 mu M) with iron at 350 degrees C for 6 h. Spectroscopic measurements indicated that PFOS in water markedly adsorbed on the iron surface even at room temperature, and the adsorbed fluorinated species on the iron surface decomposed with rising temperature, with prominent release of F- ions to the solution phase above 250 degrees C. This method was also effective in decomposing other perfluoroalkylsulforiates bearing shorter chain (C-2-C-6) perfluoroalkyl groups and was successfully applied to the decomposition of PFOS contained in an antireflective coating agent used in semiconductor manufacturing.
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页码:1049 / 1054
页数:6
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